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AOT500 N-Channel Enhancement Mode Field Effect Transistor
General Description
AOT500 uses an optimally designed temperature compensated gate-drain zener clamp. Under overvoltage conditions, the clamp activates and turns on the MOSFET, safely dissipating the energy in the MOSFET. The built in resistor guarantees proper clamp operation under all circuit conditions, and the MOSFET never goes into avalanche breakdown. Advanced trench technology provides excellent low Rdson, gate charge and body diode characteristics, making this device ideal for motor and inductive load control applications. Standard Product AOT500 is Pb-free (meets ROHS & Sony 259 specifications).
TO-220 D Top View Drain Connected to Tab
Features
VDS (V) = Clamped ID = 80A (VGS = 10V) RDS(ON) < 5.3 m (VGS = 10V)
G
10
G
D
S
S
Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol Maximum VDS Drain-Source Voltage clamped VGS Gate-Source Voltage clamped Continuous Drain TC=25C 80 Current G ID TC=100C 57 Continuous Drain Gate Current +50 IDG Continuouse Gate Source Current +50 IGS Pulsed Drain Current C Avalanche Current L=100uHH Repetitive avalanche energy
H
Units V V A mA A A mJ W C
IDM IAR
250 50 125 115 58 -55 to 175
EAR TC=25C PD Power Dissipation B TC=100C Junction and Storage Temperature Range TJ, TSTG
Thermal Characteristics Parameter A Maximum Junction-to-Ambient B Maximum Junction-to-Case
Steady-State Steady-State
Symbol RJA RJC
Typ 60 0.7
Max 75 1.3
Units C/W C/W
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT500
Electrical Characteristics (TJ=25C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS(z) Drain-Source Breakdown Voltage BVCLAMP Drain-Source Clamping Voltage IDSS(z) Zero Gate Voltage Drain Current BVGSS Gate-Source Voltage IGSS Gate-Body leakage current VGS(th) Gate Threshold Voltage ID(ON) On state drain current RDS(ON) gFS VSD IS Static Drain-Source On-Resistance Conditions ID=10mA, VGS=0V ID=1A, VGS=0V VDS=16V, VGS=0V VDS=0V, ID=250A VDS=0V, VGS=10V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=30A TJ=125C Min 33 36 20 1.5 250 2 4.1 6.2 95 0.7 10 3 5.3 Typ Max Units V V A V V A m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC
44 30
Forward Transconductance VDS=5V, ID=30A IS=1A, VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current
1 80 6150
DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
4735 765 340 13 69 34 12 15 25 35 150 62 60 84
17 89
VGS=10V, VDS=15V, ID=30A
VGS=10V, VDS=15V, RL=0.5, RGEN=3 IF=30A, dI/dt=100A/s IF=30A, dI/dt=100A/s
78
A: The value of R JA is measured with the device in a still air environment with T A =25C. B. The power dissipation PD is based on T J(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. EAR and IAR are based on a 100uH inductor with Tj(start) = 25C for each pulse. 11 Rev 0_prelim: December 2007 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
www.aosmd.com
AOT500
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
250 10V 200 150 4.5V 100 50 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics ID(A) 6V 7V 5V 80 60 40 100 VDS=5V
ID (A)
VGS
4V =10V,
ID=30A
20 0 1 1.5 2
125C
25C -40C
VGS=3.5V 2.5 3
3.5
4
VGS(Volts) Figure 2: Transfer Characteristics 2
5 VGS=10V Normalized On-Resistance 4.5 RDS(ON) (m)
1.8 1.6 1.4 1.2 1 0.8 0.6
VGS=10V ID=30A
4
3.5
20 48 30 10
26 63 40 13
3 0 5 10 15 20 25 30
-50 -25
0
25
50
75 100 125 150 175 200
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 14 12 10 RDS(ON) (m) IS (A) 8 6 4 2 2 5 8 11 14 17 20 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 100 10 1
Temperature (C) Figure 4: On-Resistance vs. Junction Temperature
ID=30A
125C 0.1 0.01 25C
125C
0.001 25C 0.0001 0.0 0.2 0.4 0.6
-40C
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
AOT500
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10 8 VGS (Volts) 6 4 2 0 0
7000
VDS=30V ID=30A Capacitance (pF)
6000 5000 4000 3000 2000 1000 0
Crss
Ciss
VGS=10V, ID=30A
Coss
10
20
30
40
50
60
70
0
5
10
15
20
25
30
Qg (nC) Figure 7: Gate-Charge Characteristics 1000
VDS (Volts) Figure 8: Capacitance Characteristics
10000
TJ(Max)=175C TA=25C
100s
Power (W)
ID (Amps)
RDS(ON) 100 limited
10s
1000
10 TJ(Max)=175C TC=25C 1 0.1 1 10 DC
1ms 10ms
20 48 30 10
26 63 40 13
100
100 0.00001 0.0001
VDS (Volts)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ZJC Normalized Transient Thermal Resistance
0.001 0.01 0.1 1 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Case (Note F)
D=Ton/T TJ,PK=TA+PDM.ZJC.RJC RJC=1.3C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1 Single Pulse 0.01 0.00001
PD Ton 0.01 0.1 1
T 10 100
0.0001
0.001
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
AOT500
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100 ID(A), Peak Avalanche Current
tA =
L ID
Power Dissipation (W)
120 100 80 60 40 20 0
BV - VDD
10
VGS=10V, ID=30A
TC=25C 1 0.01 0.1 1 10 100 1000
0
25
Time in avalanche, tA (us) Figure 12: Single Pulse Avalanche capability
75 100 125 150 TCASE (C) Figure 13: Power De-rating (Note B)
50
175
100 80 Current rating ID(A) 60 40 20 0 0 25 50 75 100 125 150 175
TCASE (C) Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
AOT500
TYPICAL PROTECTION CHARACTERISTICS
2.00 Trench BV 1.50
ID (A)
BVCLAMP
1.00
0.50
D
BVDSS(Z)
0.00 30 35 40 45 G R
+ Vz +
+ -
VDS (Volts) Fig 15: BVCLAMP Characteristic This device uses built-in Gate to Source and Gate to Drain zener protection. While the Gate-Source zener protects against excessive VGS conditions, the Gate to Drain protection, clamps the VDS well below the device breakdown, preventing an avalanche condition within the MOSFET as a result of voltage over-shoot at the Drain electrode. It is designed to breakdown well before the device breakdown. During such an event, current flows through the zener clamp, which is situated internally between the Gate to Drain. This current flows at BVDSS(Z), building up the VGS internal to the device. When the current level through the zener reaches approximately 300mA, the VGS is approximately equal to VGS(PLATEAU), allowing significant channel conduction and thus clamping the Drain to Source voltage. The VGS needed to turn the device on is controlled with an internally lumped gate resistor R approximately equal to 10. VGS(PLATEAU)= 10 x 300mA =3V It can also be said that the VDS during clamping is equal to: BVDSS = BVCLAMP + VGS(PLATEAU) Additional power loss associated with the protection circuitry can be considered negligible when compare to the conduction losses of the MOSFET itself; EX: PL=30Amax x 16V=0.48mW PL(rds)=102A x 6m=300mW (Zener leakage loss) (MOSFET loss)
VPLATEAU
S
-
60.00 50.00 ID (A)/ Vds(V) 40.00 30.00 20.00 10.00
BVCLAMP25oC
BVCLAMP 100 C
o
0.00 0.00E+00 2.50E-06
5.00E-06 7.50E-06
1.00E-05
Time in Avalanche (Seconds) Fig 16: Unclamped Inductive Switching Fig16: The built-in Gate to Drain clamp prevents the device from going into Avalanche by setting the clamp voltage well below the actual breakdown of the device. When the Drain to Gate voltage approaches the BV clamp, the internal Gate to Source voltage is charged up and channel conduction occurs, sinking the current safely through the device. The BVCLAMP is virtually temperature independent, providing even greater protection during normal operation.
Alpha & Omega Semiconductor, Ltd.

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